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 HOME > Products > Semiconductor
LPA-EXA100
Excimer laser annealing system
Excimer laser annealing system
 
Model    LPA-EXA100
Laser type     XeCl
Wave Length     308 mm
Pulse repetion rate    < 30 Hz
Average energy    < 500mJ
Power stability    5 %
Warming up    30 min.
Gas lifetime    20 x 10e6 pulses
Beam dimension   10 x 20 §±
Beam divergence    3 x 10 mrad
Laser tube lifetime    1 I 109 pulses
Cooling     Water

- Amorphous silicon annealing system by excimer laser

- Amorphous silicon is changed to polycrystalline sillicon after melting in a moment

   during being irradiated by XeCl excimer laser.

- TFT LCD annealing process